Structure and method of latchup robustness with placement of through wafer via within cmos circuitry

ABSTRACT

A method of manufacturing a semiconductor structure includes: forming a trench in a back side of a substrate; depositing a dopant on surfaces of the trench; forming a shallow trench isolation (STI) structure in a top side of the substrate opposite the trench; forming a deep well in the substrate; out-diffusing the dopant into the deep well and the substrate; forming an N-well and a P-well in the substrate; and filling the trench with a conductive material.

FIELD OF THE INVENTION

The invention relates to integrated circuits, and more particularly, tostructures and methods for providing latchup robustness in integratedcircuits.

BACKGROUND

Noise isolation and the elimination of complementary metal-oxidesemiconductors (CMOS) latchup are significant issues in advanced CMOStechnology, radio frequency (RF) CMOS, and bipolar CMOS (BiCMOS) SiliconGermanium (SiGe) technology. Latchup conditions typically occur withinperipheral circuits or internal circuits, within one circuit(intra-circuit), or between multiple circuits (inter-circuit). In onesuch example, latchup occurs when a PNPN structure transitions from alow current high voltage state to a high current low voltage statethrough a negative resistance region (i.e., forming an S-Type I-V(current/voltage) characteristic).

In particular, latchup is known to be initiated by an equivalent circuitof a cross-coupled PNP and NPN transistor. With the base and collectorregions being cross-coupled, current flows from one device leading tothe initiation of the second device (“regenerative feedback”). These PNPand NPN elements can be any diffusions or implanted regions of othercircuit elements (e.g., p-channel MOSFETs, n-channel MOSFETs, resistors,etc.) or actual pnp and npn bipolar transistors. In CMOS structures, thepnpn structure can be formed with a p-diffusion in a n-well, and an-diffusion in a p-substrate (“parasitic PNPN”). In this case, the welland substrate regions are inherently involved in the latchup currentexchange between regions in the device.

The condition for triggering a latchup is a function of the current gainof the PNP and NPN transistors, and the resistance between the emitterand the base regions. This inherently involves the well and substrateregions. The likelihood or sensitivity of a particular pnpn structure tolatchup is a function of a same combination of spacing (e.g., base widthof the NPN and base width of the PNP), current gain of the transistors,substrate resistance and spacings, the well resistance and spacings, andisolation regions.

Latchup can also occur as a result of the interaction of anelectrostatic discharge (ESD) device, the input/output (I/O) off-chipdriver and adjacent circuitry initiated in the substrate from theovershoot and undershoot phenomena. These factors can be generated byCMOS off-chip driver circuitry, receiver networks, and ESD devices. InCMOS I/O circuitry, undershoot and overshoot can lead to injection inthe substrate, and simultaneous switching of circuitry where overshootor undershoot injection occurs may lead to both noise injection andlatchup conditions. Also, supporting elements in these circuits, such aspass transistors, resistor elements, test functions, over voltagedielectric limiting circuitry, bleed resistors, keeper networks andother elements can be present, contributing to noise injection into thesubstrate and latchup.

With the scaling of standard CMOS technology, the spacing of the p+/n+space decreases, leading to a lower trigger condition and the onset ofCMOS latchup. With the scaling of the shallow trench isolation (STI) foraspect ratio, the vulnerability of CMOS technology to latchup hasincreased. Vertical scaling of the wells, and lower n-well and p-wellimplant doses also has increased the lateral parasitic bipolar currentgains, leading to lower latchup robustness.

With the transition from p+ substrates to low doped p-substrates, thelatchup robustness has continued to decrease. Also, the effectiveness ofn-wells as guard ring structures may reduce internal and externallatchup problems. But, with mixed signal applications and radiofrequency (RF) chips, a higher concern for noise reduction has lead tothe continued lowering of the substrate doping concentration. Thiscontinues to lead to lower latchup immunity in mixed signal applicationsand RF technologies.

Latchup also can occur from voltage or current pulses that occur on thepower supply lines. Transient pulses on power rails (e.g., substrate orwells) can trigger latchup processes. Latchup can also occur from astimulus to the well or substrate external to the region of a thyristorstructure from minority carriers.

Latchup can be initiated from internal or external stimulus, and isknown to occur from single event upsets (SEU), which can includeterrestrial emissions from nuclear processes, and cosmic ray events, aswell as events in space environments. Cosmic ray particles can includeproton, neutron, and gamma events, as well as a number of particles thatenter the earth atmosphere. Terrestrial emissions from radioactiveevents, such as alpha particles, and other radioactive decay emissionscan also lead to latchup in semiconductors.

For military, surveillance, satellite, and other outer spaceapplications, it is desirable to have a high tolerance to latchup.Latchup can lead to failure of space applications triggered by cosmicrays, heavy ions, proton and neutron events. The higher the latchupmargin in military and outer space applications, the higher thevulnerability to single even upset (SEU) initiated latchup.

Accordingly, there exists a need in the art to overcome the deficienciesand limitations described hereinabove.

SUMMARY

In a first aspect of the invention, a method of manufacturing asemiconductor structure comprises: forming a trench in a back side of asubstrate; depositing a dopant on surfaces of the trench; forming ashallow trench isolation (STI) structure in a top side of the substrateopposite the trench; forming a deep well in the substrate; out-diffusingthe dopant into the deep well and the substrate; forming an N-well and aP-well in the substrate; and filling the trench with a conductivematerial.

The method may comprise removing excess dopant from the trench. Inembodiments, out-diffusing creates an electrical contact at an interfaceof the trench and the deep well, and a high voltage junction at aninterface of the trench and the substrate.

The trench may extend to a bottom surface of the shallow trenchisolation structure. In embodiments, the deep well is a deep N-well, andthe trench extends through the N-well, the deep N-well, and thesubstrate.

The method may comprise forming a trench isolation (TI) structurethrough the STI structure. The TI structure may extend between theN-well and the P-well, into the deep well, and to an upper surface ofthe trench. The method may further comprise lining surfaces of thetrench with a barrier material before the filling.

In another aspect of the invention, a method of manufacturing asemiconductor structure comprises: forming a deep trench (DT) structurein a substrate; forming a shallow trench isolation (STI) structure overthe DT structure; forming a trench in a back side of the substrateopposite the DT and STI structure; depositing a dopant on surfaces ofthe trench; forming a deep well in the substrate; out-diffusing thedopant into the deep well and the substrate; forming an N-well and aP-well in the substrate; and filling the trench with a conductivematerial.

In another aspect of the invention, a method includes: forming an NFETdevice having a P-well at a top side of a substrate; forming a PFETdevice having an N-well at the top side of the substrate; and forming athrough wafer via from a backside of the substrate to a bottom surfaceof an isolation structure located between the NFET device and the PFETdevice.

In another aspect of the invention, a semiconductor structure comprises:an NFET device having a P-well at a top side of a substrate; a PFETdevice having an N-well at the top side of the substrate; and asubstrate contact comprising a through wafer via extending from abackside of the substrate to a bottom surface of an isolation structurelocated between the NFET device and the PFET device. The substratecontact is arranged to prevent formation of a parasitic circuit.

In another aspect of the invention, a semiconductor structure includes:an NFET device having a P-well at a top side of a substrate; a PFETdevice having an N-well at the top side of the substrate; a deep wellformed in the substrate below the N-well and the P-well; a through wafervia extending from a backside of the substrate to a bottom surface of anisolation structure; an electrical connection region between the throughwafer via and the deep well; and a high voltage junction between thethrough wafer via and the substrate.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The present invention is described in the detailed description whichfollows, in reference to the noted plurality of drawings by way ofnon-limiting examples of exemplary embodiments of the present invention.

FIGS. 1-4 show semiconductor structures having a substrate contactformed at the upper surface of the substrate;

FIGS. 5-28 show semiconductor structures in accordance with aspects ofthe invention; and

FIGS. 29-54 show intermediate structures and process steps in accordancewith aspects of the invention.

DETAILED DESCRIPTION

The invention relates to integrated circuits, and more particularly, tostructures and methods for providing latchup robustness in integratedcircuits. In embodiments, a through wafer via (TWV) is formed from theback side of a wafer to an isolation feature between the P-well andN-well of a chip. The isolation feature may be, for example, a shallowtrench isolation (STI), trench isolation (TI), or deep trench (DT)feature.

FIG. 1 is a cross section of an integrated circuit, in which a substrate100 has an N-well 105 and a P-well 110 formed therein. PFET device 115includes source and drain regions 120 formed in the N-well 105, gate125, source/drain contacts 130, and N-well contact 133. NFET device 135includes source and drain regions 140 formed in the P-well 110, gate145, and source/drain contacts 150. Shallow trench isolation (STI)regions 155 separate the PFET 115 and the NFET 135, and define areas ofthe circuit. NFET 135 also includes a P+ substrate contact 160 formed atthe upper surface of the substrate 100. As depicted in FIG. 2, which isa plan view of portions of the integrated circuit of FIG. 1, the P+substrate contact 160 adds to the footprint (e.g., size) of theintegrated circuit, by virtue of its being formed at the top surface ofthe substrate 100.

FIG. 3 is a cross section of an integrated circuit that comprises a gatearray, in which gates 165 span the N-well 105 and P-well 110 formed inthe substrate 100. Similar to FIG. 1, the integrated circuit includes aP+ substrate contact 160 that, as depicted in FIG. 4, adds to thefootprint of the integrated circuit. In addition to increasing thefootprint of the integrated circuit, substrate contacts formed at theupper surface of the substrate are subject to CMOS latchup due to thelocation of the substrate contact (e.g., outside the interface betweenthe PFET and the NFET). Moreover, substrate contacts formed at the uppersurface of the substrate disadvantageously interfere with the directionof the polysilicon gates.

According to aspects of the invention, CMOS latchup performance can beimproved by replacing the surface-located substrate contact with athrough wafer via (TWV) located between the NFET and the PFET and wiredto the back side of the wafer. For example, FIG. 5 shows a cross sectionof an integrated circuit according to aspects of the invention. In FIG.5, and all other figures herein, like reference numerals representsimilar features as those already described. In embodiments, theintegrated circuit comprises a through wafer via (TWV) 175 formedbetween the NFET 135 and the N-well 105. In particular embodiments, theTWV 175 extends from the bottom of the substrate 100 (e.g., the backside of the wafer) to a lower surface of an STI 155 formed between theNFET 135 and the PFET 115. The TWV 175 may be composed of materials suchas, but not limited to: doped polysilicon, tungsten, titanium, tantalum,or combinations thereof. According to aspects of the invention, thematerial of the TWV 175 is chosen to create an electrical contactbetween the TWV 175 and the P-well 110. In further embodiments, the TWV175 may be in contact with a conductive layer 180 formed on the backside of the wafer. The conductive layer 180 may comprise, but is notlimited to: doped polysilicon, tungsten, titanium, tantalum, aluminum,platinum, nickel, cobalt, metal silicide, or combination thereof.

By utilizing the TWV 175 (and, optionally, the conductive layer 180) thesubstrate contact (e.g., 160 shown in FIG. 1) may be eliminated from thetop side of the integrated circuit, and effectively moved to a locationbetween the NFET 135 and the PFET 115. In this manner, CMOS internallatchup is improved because of the elimination of the lateral NPNtransistor current gain with the placement of the contact (e.g., theTWV) between the N-well and the NFET. With the presence of the TWV, noparasitic npn bipolar transistor occurs. Without the parasitic npntransistor, CMOS latchup can not occur. Also, CMOS latchup minorityrecombination improves due to through wafer via structure. Minoritycarriers recombine at the insulating or metal interface caused by a TWV.Recombination lowers the parasitic bipolar current gain, and henceimproves the latchup robustness. Furthermore, CMOS latchup is improveddue to reduced substrate shunt resistance due to reduced substratespacing contact (e.g. substrate-to-NFET spacing contact) and lowresistance TWV shunt; this prevents forward biasing of the npnemitter-base junction. Moreover, using the TWV as a substrate contactlocated between the PFET and NFET and back-side wired provides lowresistance. Additionally, the through wafer via is wired on the backside of the wafer providing very low resistance shunt.

According to aspects of the invention, the TWV 175 is adjacent to orextends through the P-well 110, but does not contact the N-well 105. Inthis manner, the TWV 175 helps prevent latchup by preventing formationof a parasitic lateral PNPN device comprising source/drain 120,source/drain 140, P-well 110, and N-well 105. In FIG. 5, the substrateis P-type; however, it should be understood that in the arrangementshown in FIG. 5, and in all other arrangements described herein, thesubstrate may be N-type, with the TWV 175 formed adjacent to or throughthe N-well instead of the P-well.

FIG. 6 is a plan view of portions of the integrated circuit shown inFIG. 5. As can be seen from FIG. 6, the TWV 175 is formed between theNFET (e.g., gate 145) and the PFET (e.g., gate 125). FIGS. 7 and 8 are across section and plan view, respectively, of portions of an integratedcircuit having a gate array according to aspects of the invention. Asdepicted in FIGS. 7 and 8, the TWV 175 may be located between the N+source/drain region 140 (as in FIG. 5) of the NFET 135 and the N-well105 of the PFET 115. Although not shown, a conductive layer 180 may beformed on the back side of the wafer in this embodiment, and all otherembodiments described herein.

FIGS. 9 and 10 show configurations of an integrated circuit according toaspects of the invention in which the P-well 110 and the N-well 105 arenot adjacent to one another (as in FIG. 5). As shown in FIG. 9, a spacemay be left between the P-well 110 and the N-well 105, and the TWV 175may be formed adjacent to the P-well 110 and extending into the space(but not touching the N-well 105). Alternatively, as depicted in FIG.10, the TWV 175 may be formed wholly within the confines of the P-well110, with a space still formed between the P-well 110 and the N-well105.

FIGS. 11-16 show configurations of the integrated circuit according toaspects of the invention in which in which a second TWV 175′ isutilized. The second TWV 175′, formed on a side of the P-well oppositethe first TWV 175, provides additional protection against CMOS latchup.In embodiments, the second TWV 175′, like the first TWV 175, extendsfrom the back side of the substrate 100 to a bottom surface of an STI175. With the usage of a plurality of through wafer via (TWV)structures, the substrate resistance is lower. Adding two TWV near aNFET lowers the substrate shunt resistance, providing a latchupimprovement. Secondly, with the addition of more than one TWV, minoritycarriers from the NFET can not reach adjacent n-well regions in otheradjacent circuitry. Providing a TWV on both side prevents the formationof a parasitic NPN element improving the latchup robustness in thatphysical dimension. Note that a TWV can be formed in all directions,avoiding parasitic NPN transistors with any n-type region in any otherdirection.

The arrangement of FIG. 11 shows the P-well 110 and the N-well 105 incontact with each other, the first TWV 175 within the P-well 110, andthe second TWV 175′ adjacent to the P-well 110. The arrangement of FIG.12 shows the P-well 110 and the N-well 105 not in contact with eachother, the first TWV 175 within the P-well 110, and the second TWV 175′adjacent to the P-well 110. The arrangement of FIG. 13 shows the P-well110 and the N-well 105 not in contact with each other, the first TWV 175adjacent the P-well 110, and the second TWV 175′ adjacent to the P-well110. The arrangement of FIG. 14 shows the P-well 110 and the N-well 105in contact with each other, the first TWV 175 within the P-well 110, andthe second TWV 175′ within the P-well 110. The arrangement of FIG. 15shows the P-well 110 and the N-well 105 not in contact with each other,the first TWV 175 within the P-well 110, and the second TWV 175′ withinthe P-well 110. The arrangement of FIG. 16 shows the P-well 110 and theN-well 105 not in contact with each other, the first TWV 175 adjacent tothe P-well 110, and the second TWV 175′ within the P-well 110.

FIG. 17 shows an arrangement according to aspects of the invention inwhich a remote TWV 175″ is formed on the opposite side of the N-well 105(but not in contact with the N-well 105). In this fashion, minoritycarrier electrons can not reach the N-well region 105, preventinglatchup from occurring due to injection from adjacent circuitry. FIG. 18shows an arrangement according to aspects of the invention including afirst TWV 175, second TWV 175′, and remote TWV 175″. FIG. 19 shows anarrangement according to aspects of the invention in which a TWV 175 isused in conjunction with a substrate contact 160 formed at the uppersurface of the substrate.

FIGS. 9-19 demonstrate that one or more through wafer vias may be usedin various locations of an integrated circuit to provide improved CMOSlatchup performance. Moreover, although FIGS. 9-19 depict alternativearrangements of single gate CMOS devices, it should be understood thataspects of FIGS. 9-19 may be utilized with integrated circuits havinggate arrays (e.g., similar to FIGS. 7 and 8).

FIGS. 5-19 depict structures in which the TWV (e.g., 175) extends fromthe backside of the wafer to a surface of the shallow trench isolation(STI) structure (e.g., 155). The STI defines the openings for MOSFETs,bipolar and other semiconductor components. Shallow trench isolation(STI) normally varies from about 0.1 um to about 0.5 um deep, and may beformed prior completion of the MOSFET and bipolar transistors.

However, the invention is not limited to use with STI structures.Instead, the TWV may also be used with trench isolation (TI) or deeptrench (DT) structures. Trench isolation (TI) is a structure which oftenhas less cost and is implemented later in the semiconductor process. Asa result, the TI structure may be formed using an etch process after theMOSFET and bipolar transistors are formed in a BiCMOS process. In thiscase, the TI structure may be filled with oxide insulator due to lowthermal cycles after this process step. For example, a silicon-dioxideTI is between about 2 um to about 4 um deep, and is formed prior to theback-end-of-line (BEOL) contact etch.

FIG. 20 shows a cross section of an integrated circuit according toaspects of the invention in which a TWV 175 is used in conjunction witha trench isolation (TI) structure 185. In embodiments, the TI 185extends through an STI 155 located between the NFET 135 and the PFET115. The TWV 175 extends from the back side of the substrate 100 to thebottom surface of the TI 185. As with the embodiments described supra,the TWV 175 contacts the P-well 110 but not the N-well 105, therebycreating an electrical connection with the P-well 110. As depicted inFIG. 21, the TI 185 and TWV 175 may also be used in an integratedcircuit having a gate array. Although not shown, various arrangementsand locations of the TI 185 and TWV 175 (e.g., similar to that shown inFIGS. 9-19) may also be used in implementations of the invention. The TI185 may be used to provide enhanced CMOS latchup performance, as itextends even further below the region where PNPN parasitic contactbegins (e.g., when compared to embodiments using only STI structures).The presence of the TI structure 185 prevents electrons to flow from then+ diffusions of the NFET 135 to the N-well 105, preventing theformation of a parasitic npn transistor. In conjunction with the TWVabutting the TI region, electrons that flow deep into the substratebelow the p-well region 110 can not reach the N-well region 105. Hencethe arrangement of the TI and TWV together prevent the formation of aparasitic npn transistor; hence, preventing formation of a parasiticpnpn and hence, CMOS latchup.

A deep trench (DT) structure may include a structure formed early in thesemiconductor process. The DT structure typically has an oxide sidewall,and may be filled with polysilicon material (e.g., to avoid thermalstress issues). In this example, the structure can be referred to as thepolysilicon-filled DT structure. The depth of the DT structure may rangefrom about 4 um to about 12 um, for example. The DT structure also canbe formed after epitaxial growth in a BiCMOS process.

FIG. 22 shows a cross section of an integrated circuit according toaspects of the invention in which a deep trench (DT) structure 190 isutilized in conjunction with a TWV 175. In embodiments, the DT 190comprises a sidewall 195 and a core 200, such as, for example, an oxideand/or nitride sidewall 195 and a polysilicon or refractory metal core200. In embodiments, the TWV 175 extends from the backside of the waferto the bottom of the DT 190, which is located below the lower surface ofthe P-well 110. According to further aspects of the invention, the DT190 extends from the TWV 175 to a bottom surface of an STI 155 betweenthe NFET 135 and the PFET 115. The DT 190 may be used to provideenhanced CMOS latchup performance, as it extends even further below theregion where PNPN parasitic contact begins (e.g., when compared toembodiments using only STI structures or STI and TI structures). Thepresence of the DT structure 190 prevents electrons to flow from the n+diffusions of the NFET 135 to the N-well 105, preventing the formationof a parasitic npn transistor. In conjunction with the TWV abutting theDT region, electrons that flow deep into the substrate below the p-wellregion 110 can not reach the N-well region 105. Hence the arrangement ofthe DT and TWV together prevent the formation of a parasitic npntransistor; hence, preventing formation of a parasitic pnpn and hence,CMOS latchup.

FIG. 23 shows a configuration according to aspects of the inventionhaving an NFET 135 and a PFET 115, in which a second TWV 175′ and secondDT 190′ are formed on a side of the N-well opposite the first TWV 175and first DT 190. FIG. 24 shows an arrangement according to aspects ofthe invention having an NFET 135 and a PFET 115 in which a subcollector205 is formed under the N-well 105 between the first DT 190 and thesecond DT 190′. The subcollector 205 is an N-type region formed using adifferent implantation dosage and energy than the N-well 105, and thusforms an additional barrier to the development of a parasitic PNPNcircuit. As depicted in FIG. 25, the combination of a TWV 175 and DT 190can also be used with integrated circuits comprising gate arrays.Moreover, although not shown, various arrangements and locations of theDT 190 and TWV 175 (e.g., similar to that shown in FIGS. 9-19) may alsobe used in implementations of the invention.

In embodiments described up to this point, the TWV acts as a substratecontact that is at substantially the same electrical potential as theP-well. Also, the TWV serves as a low resistance shunt to the substratewhich lowers the possibility of CMOS latchup by preventing forward biasof the junction (e.g., prevents an emitter base voltage (VBE) of theparasitic NPN). Since it is undesirable to short the N-well and P-welltogether in such configurations, the TWV only contacts the P-well, andnot the N-well.

However, use of a TWV is not limited to the situations already describedherein. For example, in high voltage power applications having a deepN-well, a TWV may be used as a low resistance shunt to minimize CMOSlatchup by lowering the N-well shunt resistance. In embodiments, dopantsdeposited in the TWV trench are out-diffused to form a high voltagejunction isolation of the TWV to the substrate region while making anelectrical connection to the deep N-well and/or the PFET N-well abovethe deep N-well.

For example, FIG. 26 shows a cross section of an integrated circuithaving a substrate 100, N-well 105, P-well 110, PFET 115, NFET 135 andSTI 155. The circuit further comprises a deep N-well 220, formed belowthe N-well 105 and P-well 110. Such configurations are commonlyutilized, for example, in high voltage power applications. However,instead of having a through wafer via in contact with the P-well (e.g.,TWV 175), the circuit shown in FIG. 26 has a deep well through wafer via225 extending from the bottom of an STI 155, through the N-well 105,through the deep N-well 220, and through the substrate 100 to a back endof the wafer. As described in greater detail herein, an out diffusion ofdopants creates an electrical connection region 230 between the deepwell through wafer via 225 and at least one of the N-well 105 and thedeep N-well 220. The same out-diffusion also creates a high voltagejunction 235 at the interface between the deep well through wafer via225 and the substrate 100. In this manner, the deep well through wafervia 225 may be used as a low resistance shunt to minimize CMOS latchupby lowering the shunt resistance of the N-well 105.

In embodiments, the deep well through wafer via 225 includes a barriermetal liner 240 and a conductor 245. The barrier metal liner 240 maycomprise, but is not limited to: titanium nitride or other refractorymetal nitride, titanium or other refractory metal, titanium silicide orother metal silicide, or combination thereof. The conductor 245 mayinclude, but is not limited to: doped polysilicon, tungsten, titanium,tantalum, aluminum, copper, platinum, nickel, cobalt, metal silicide orcombinations thereof.

FIG. 27 shows a deep N-well device having a deep well through wafer viain association with a trench isolation (TI) structure 185. Morespecifically, FIG. 27 shows a circuit having a substrate 100, N-well105, P-well 110, PFET 115, NFET 135 and STI 155. The circuit furthercomprises a deep N-well 220, formed below the N-well 105 and P-well 110.A trench isolation (TI) 185 extends through one of the STI 155, downinto the deep N-well 220. A deep well through wafer via 225 extends fromthe back side of the wafer to the bottom of the TI 185. Due to anout-diffusion process, the circuit includes an electrical connectionregion 230 between the deep well through wafer via 225 and the deepN-well 220, and a high voltage junction region 235 between the deep wellthrough wafer via 225 and the substrate 100. In embodiments, the deepwell through wafer via 225 includes a barrier metal liner 240 and aconductor 245.

FIG. 28 shows a deep N-well device having a deep well through wafer viain association with a deep trench (DT) structure 190. More specifically,FIG. 28 shows a circuit having a substrate 100, N-well 105, P-well 110,PFET 115, NFET 135 and STI 155. The circuit further comprises a deepN-well 220, formed below the N-well 105 and P-well 110. A deep trench(DT) 190 extends from the bottom surface of one of the STI 155, downinto the deep N-well 220. A deep well through wafer via 225 extends fromthe back side of the wafer to the bottom of the DT 190. Due to anout-diffusion process, the structure includes an electrical connectionregion 230 between the deep well through wafer via 225 and the deepN-well 220, and a high voltage junction region 235 between the deep wellthrough wafer via 225 and the substrate 100. In embodiments, the deepwell through wafer via 225 includes a barrier metal liner 240 and aconductor 245. In embodiments, the DT 190 includes a sidewall 195 and acore 200 (e.g., similar to that of FIG. 22).

FIGS. 29-37 show intermediate structures and respective processing stepsfor manufacturing a semiconductor structure having a deep N-well, and adeep well through wafer via in contact with a shallow trench isolation(STI), in accordance with aspects of the invention. Specifically, FIG.29 shows cross section of an exemplary semiconductor structure in whicha trench 300 for a through wafer via is formed in a substrate 100. Thetrench 300 may be formed using conventional techniques, such as, forexample, forming a resist pattern (not shown) on the back side of thesubstrate 100, etching material to form the trench 300, and removing theresist.

At FIG. 30, a dopant source 305 is deposited on the surfaces of thetrench 300. The dopant source 305 may be deposited using conventionaltechniques, such as, for example, chemical vapor deposition (CVD),plasma assisted CVD, etc. In embodiments, the dopant source 305comprises doped polysilicon, doped oxides or doped silicate glasses,although the invention is not limited to these examples, and anysuitable compositions may be used.

At FIG. 31, shallow trench isolations (STI) 155 are formed on the topside of the substrate 100. The STI 155 may be formed using conventionaltechniques, such as, for example: depositing resist on the upper surfaceof the substrate; masking and patterning the resist to form openings forthe STI; etching substrate material in the openings; stripping theresist and cleaning the upper surface of the substrate; depositing STImaterial (e.g., oxide and/or nitride); and planarizing the top surfaceof the substrate.

At FIG. 32, a deep diffused N-well 220 is formed in the substrate 100.The deep N-well 220 may be formed using conventional techniques, suchas, for example, forming a resist pattern on the top surface of thesubstrate, implanting a suitable dopant to form the deep N-well, andremoving the resist.

At FIG. 33, a hot process out-diffusion step is performed. Theout-diffusion causes dopant from the dopant source to diffuse outwardinto the substrate 100 and deep N-well 220, as depicted by the arrowsand dotted line in FIG. 33. The out-diffusion creates a high-voltagejunction region 235 between the through wafer via opening 300 and thesubstrate 100. The out-diffusion also creates an electrical contactregion 230 between the through wafer via opening 300 and the deep N-well220. In embodiments, the hot process out-diffusion step comprises theuse of thermal anneals whereby dopants diffuse from areas of higherconcentration, to areas of lower concentration.

Optionally, as shown in FIG. 34, any remaining dopant source (e.g.,backside dopant) is removed from the through wafer via opening 300. Theremaining dopant source may be removed using conventional strippingtechniques. In embodiments, this step is optional, and generally is notrequired when doped silicon or ion-implanted materials are used as thedopant source.

After the out-diffusion and optional removal of remaining dopant source,standard processing continues on the top side of the chip. For example,as depicted in FIG. 35, the following features may be formed usingconventional methods: N-well 105; P-well 110; PFET source/drain; PFETgate 125; PFET source/drain contacts 130; NFET source/drain; NFET gate145; NFET source/drain contacts 150; and N-well contact 133.

At FIG. 36, a barrier metal 240 is deposited in the through wafer viaopening 300. The barrier metal 240 may comprise, for example, titaniumnitride or other refractory metal nitride, titanium or other refractorymetal, titanium silicide or other metal silicide, or combinationthereof, and may be deposited using conventional techniques. At FIG. 37,the through wafer via opening 300 is filled with a conductor 245,thereby forming a deep well through wafer via (e.g., 225). At thispoint, the chip may be finished using, for example, conventional backend of line (BEOL) processing techniques.

FIGS. 38-46 show intermediate structures and respective processing stepsfor manufacturing a semiconductor structure having a deep N-well, and adeep well through wafer via in contact with a trench isolation (TI)structure, in accordance with aspects of the invention. Specifically,FIG. 38 shows cross section of an exemplary semiconductor structure inwhich a through wafer via trench 300 is formed in a substrate 100. Adopant source 305 is formed on the walls of the through wafer via trench300, and STI structures 155 are formed in the top side of the substrate100. These features may be formed in a manner similar to that describedwith respect to FIGS. 29-31. Of note, however, is that in FIG. 38, thethrough wafer via trench 300 does not extend to the base of the STI 155.

As depicted in FIG. 39, a deep N-well 220 is implanted in the substrate100, and the dopant source is out-diffused, similar to FIGS. 32 and 33described above. The out-diffusion creates a high-voltage junctionregion 235 between the through wafer via opening 300 and the substrate100, and also an electrical contact region 230 between the through wafervia opening 300 and the deep N-well 220. At FIG. 40, any remainingdopant source may optionally be removed, similar to FIG. 34. At FIG. 41,standard processing of the top side of the chip may be performed,similar to FIG. 35, with the exception that the source/drain contactsare not yet formed. At FIG. 42, a barrier metal 240 and conductor 245are deposited in the through wafer via trench 300, similar to FIGS. 36and 37.

At FIG. 43, a resist layer 400 is patterned on the top side of thesubstrate, leaving open the region 405 where the trench isolation (TI)structure will be formed. At FIG. 44, a trench 410 for the trenchisolation (TI) structure is etched through the STI 155, through theN-well 105 and P-well 110, through the deep N-well 220, down to the topsurface of the barrier metal 240. Subsequently, as shown at FIG. 45, theresist is stripped, the upper side of the substrate is cleaned, anddielectric 415 is deposited on the upper side of the substrate fillingthe trench 410, thereby creating the TI 185. The dielectric 415 may beplanarized. Then, as shown in FIG. 46, the source drain contacts 130 and150 are formed in the dielectric 415. At this point, the chip may befinished using, for example, conventional back end of line (BEOL)processing techniques.

FIGS. 47-54 show intermediate structures and respective processing stepsfor manufacturing a semiconductor structure having a deep N-well, and adeep well through wafer via in contact with a deep trench (DT)structure, in accordance with aspects of the invention. Specifically,FIG. 47 shows cross section of an exemplary semiconductor structure inwhich shallow trench isolation (STI) structures 155 and a deep trench(DT) structure 190 are formed at the top side of a substrate 100. The DT190 may include a sidewall 195 and a core 200 (e.g., as described abovewith respect to FIG. 22). The STI 155 and DT 190 may be formed usingconventional techniques, such as, for example, masking, etching,deposition, etc.

At FIG. 48, a through wafer via trench 300 is formed in the bottomsurface of the substrate 100. Then, as shown at FIG. 49, a dopant source305 is formed on the walls of the through wafer via trench 300. Thesefeatures may be formed in a manner similar to that described withrespect to FIGS. 29-31.

At FIG. 50, a deep N-well is formed in the substrate 100. At FIG. 51 anout-diffusion process is performed, creating an electrical connectionregion 230 and a high voltage junction 235. At FIG. 52, any remainingdopant source may optionally be removed. The steps of FIGS. 50-52 may beperformed similar to those described with respect to FIGS. 32-34.

At FIG. 53, standard processing is employed to create circuit elementsat the top side of the substrate. Then, as shown in FIG. 54, a barriermetal 240 and conductor 245 are formed in the through wafer via opening300, to create a deep well through wafer via 225. At this point, thechip may be finished using, for example, conventional back end of line(BEOL) processing techniques.

FIGS. 29-54 describe process flows for forming semiconductor structureshaving a deep N-well and a deep well through wafer via, similar to thestructures shown in FIGS. 26-28. It is noted that similar processingsteps can be used in accordance with aspects of the invention to createstructures without a deep well, such as the structures shown in FIGS.5-25. For example, the structures shown in FIGS. 5-25 may be producedusing substantially the same processing steps with the exception of notperforming the deep well implant, and by appropriately locating thethrough wafer via trench 300. Moreover, the structures shown in FIGS.5-25 may be produced with or without depositing a dopant source 305 andperforming out-diffusion. Accordingly, the point in the manufacturingprocess at which the through wafer via trench 300 is formed and filledto create the structures shown in FIGS. 5-25 will depend upon factorssuch as: manufacturability, reliability, and desired electrical contactperformance.

The method as described above is used in the fabrication of integratedcircuit chips. The resulting integrated circuit chips can be distributedby the fabricator in raw wafer form (that is, as a single wafer that hasmultiple unpackaged chips), as a bare die, or in a packaged form. In thelatter case the chip is mounted in a single chip package (such as aplastic carrier, with leads that are affixed to a motherboard or otherhigher level carrier) or in a multichip package (such as a ceramiccarrier that has either or both surface interconnections or buriedinterconnections). In any case the chip is then integrated with otherchips, discrete circuit elements, and/or other signal processing devicesas part of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention. Asused herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”and/or “comprising,” when used in this specification, specify thepresence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components, and/or groups thereof.

The corresponding structures, materials, acts, and equivalents of allmeans or step plus function elements, if any, in the claims below areintended to include any structure, material, or act for performing thefunction in combination with other claimed elements as specificallyclaimed. The description of the present invention has been presented forpurposes of illustration and description, but is not intended to beexhaustive or limited to the invention in the form disclosed. Manymodifications and variations will be apparent to those of ordinary skillin the art without departing from the scope and spirit of the invention.The embodiments were chosen and described in order to best explain theprinciples of the invention and the practical application, and to enableothers of ordinary skill in the art to understand the invention forvarious embodiments with various modifications as are suited to theparticular use contemplated.

What is claimed is:
 1. A semiconductor structure, comprising: an NFETdevice having a P-well at a top side of a substrate; a PFET devicehaving an N-well at the top side of the substrate; and a substratecontact comprising a through wafer via extending from a backside of thesubstrate to a bottom surface of an isolation structure located betweenthe NFET device and the PFET device, wherein the substrate contact isarranged to prevent formation of a parasitic circuit.
 2. Thesemiconductor structure of claim 1, wherein the through wafer via is incontact with and at substantially a same electrical potential as one ofthe P-well and the N-well, and is remote from the other of the P-welland the N-well, respectively.
 3. The semiconductor structure of claim 1,wherein a top portion of the through wafer via contacts a bottom portionof the isolation structure.
 4. The semiconductor structure of claim 3,wherein the isolation structure comprises one of: a shallow trenchisolation (STI) structure, a trench isolation (TI) structure formedthrough a shallow trench isolation (STI) structure, and a deep trench(DT) structure formed below a shallow trench isolation (STI) structure.5. The semiconductor structure of claim 1, further comprising a dopantout-diffused from surfaces of a via opening of the through wafer viainto the substrate and a deep well.
 6. The semiconductor structure ofclaim 1, wherein the electrically conductive material comprises abarrier metal liner.
 7. The semiconductor structure of claim 1, whereinthe through wafer via comprises a barrier metal liner around a conductorcore.
 8. The semiconductor structure of claim 1, wherein theelectrically conductive material directly contacts one of the P-well andthe N-well.
 9. The semiconductor structure of claim 1, wherein anuppermost surface of the through wafer via contacts a bottommost surfaceof the isolation structure.
 10. The semiconductor structure of claim 1,wherein the through wafer via directly contacts the isolation structureand avoids direct contact with a source region and a drain region of theNFET device.
 11. The semiconductor structure of claim 1, furthercomprising a deep N-well in the substrate, wherein the P-well and theN-well are both within the deep N-well.
 12. The semiconductor structureof claim 11, further comprising: a source/drain region of the NFETdevice in the P-well and abutting the isolation structure; and asource/drain region of the PFET device in the N-well and abutting theisolation structure.
 13. The semiconductor structure of claim 12,further comprising an N-well contact in the P-well.
 14. Thesemiconductor structure of claim 11, wherein the isolation structureextends into the deep N-well.
 15. The semiconductor structure of claim11, wherein an interface between the substrate contact and the bottomsurface of the isolation structure is in the deep N-well.
 16. Thesemiconductor structure of claim 11, wherein the isolation structurecomprises a shallow trench isolation (STI) structure and an isolationfeature that abuts and extends below the STI structure.
 17. Thesemiconductor structure of claim 16, wherein the isolation feature isone of: a trench isolation (TI) structure formed through the STIstructure, and a deep trench (DT) structure formed below the STIstructure.
 18. The semiconductor structure of claim 16, wherein aninterface between the substrate contact and the bottom surface of theisolation feature is in the deep N-well.